منابع مشابه
High-Density Er-Implanted GaN Optical Memory Devices.
Upconversion emission has been obtained from Er-focused ion-beam (FIB) implanted GaN. Visible green emission at the 522- and 546-nm range were excited with infrared (IR) laser sources at either 840 or 1000 nm, or with both lasers simultaneously. By implanting closely spaced patterns with the FIB, we demonstrated the concept of storing data in Er-implanted GaN. Information stored as data bits co...
متن کاملcontrol of the optical properties of nanoparticles by laser fields
در این پایان نامه، درهمتنیدگی بین یک سیستم نقطه کوانتومی دوگانه(مولکول نقطه کوانتومی) و میدان مورد مطالعه قرار گرفته است. از آنتروپی ون نیومن به عنوان ابزاری برای بررسی درهمتنیدگی بین اتم و میدان استفاده شده و تاثیر پارامترهای مختلف، نظیر تونل زنی(که توسط تغییر ولتاژ ایجاد می شود)، شدت میدان و نسبت دو گسیل خودبخودی بر رفتار درجه درهمتنیدگی سیستم بررسی شده اشت.با تغییر هر یک از این پارامترها، در...
15 صفحه اولOptical properties of GaN pyramids
Picosecond time-resolved photoluminescence ~PL! spectroscopy has been used to investigate the optical properties of GaN pyramids overgrown on hexagonal-patterned GaN~0001! epilayers on sapphire and silicon substrates with AlN buffer layers. We found that: ~i! the release of the biaxial compressive strain in GaN pyramids on GaN/AlN/sapphire substrate led to a 7 meV redshift of the spectral peak ...
متن کاملOptical properties of Pr implanted GaN epilayers and AlxGa1−xN alloys
It has been shown recently that III–V nitrides serve as a good host for rare earth elements and have many potential applications in optical communications. Most work in rare earth implanted III-nitride materials so far has been focused on GaN, while AlGaN alloys should have advantages over GaN due to wider energy band gap. In this work, photoluminescence (PL) spectroscopy was used to investigat...
متن کاملLATTICE LOCATION AND OPTICAL ACTIVATION OF RARE EARTH IMPLANTED GaN
This paper reviews the current knowledge on rare earths (REs) implanted into GaN with a special focus on their lattice location and on the optical activation by means of thermal annealing. While emission channeling experiments have given information on the lattice location of rare earths following low-dose (≈10 cm) implantation, both in the asimplanted state and after annealing up to 900°C, the...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of the Korean Institute of Electrical and Electronic Material Engineers
سال: 2005
ISSN: 1226-7945
DOI: 10.4313/jkem.2005.18.12.1101